منابع مشابه
Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions
By the insertion of thin InxGa1!xN layers into Nitrogen-polar GaN p-n junctions, polarizationinduced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium ...
متن کاملElectron transport characteristics of one-dimensional heterojunctions with multi-nitrogen-doped capped carbon nanotubes.
We present a systematic analysis of electron transport characteristics for one-dimensional heterojunctions with two multi-nitrogen-doped (multi-N-doped) capped carbon nanotubes (CNTs) facing one another at different numbers of nitrogen atoms and conformations. Our results show that the modification of the molecular orbitals by the nitrogen dopants generates conducting channels in the designed h...
متن کاملSupergrowth of nitrogen-doped single-walled carbon nanotube arrays: active species, dopant characterization, and doped/undoped heterojunctions.
We demonstrate the water-assisted supergrowth of vertically aligned single-walled carbon-nitrogen nanotubes (SWNNTs) using a simple liquid/gas-phase precursor system. In situ characterization of gas-phase nitrogen-containing precursors and their correlation to growth identifies HCN as the most active precursor for SWNNT growth, analogous to C(2)H(2) for single-walled carbon nanotubes (SWNTs). U...
متن کاملTransport of modulation-doped Al0.2Ga0.8Sb/GaSb heterojunctions
Mobilities and carrier densities of modulation doped Al0.2Ga0.8Sb/GaSb heterostructures are presented for the first time. The structures studied were grown by molecular beam epitaxy and consisted of a single heterojunction with Te compensation doping to reduce the intrinsic p-type background. Hall measurements were performed from 30–300 K, giving ptype mobilities peaking at 3240 cm/Vs, a consid...
متن کاملSmall valence-band offsets at GaN/InGaN heterojunctions
The band discontinuities between GaN and InN, as well as InGaN alloys, are key parameters for the design of nitride-based light emitters. Values reported to date are subject to large uncertainties due to strain effects at this highly mismatched interface. We have investigated the band lineups using first-principles calculations with explicit inclusion of strains and atomic relaxations at the in...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2011
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3575178